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Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

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Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

Brand Name : zmkj

Model Number : InP

Place of Origin : CHINA

MOQ : 3pcs

Price : by case

Payment Terms : T/T, Western Union

Supply Ability : 500pcs

Delivery Time : 2-4weeks

Packaging Details : single wafer package in 1000-grade cleaning room

Material : InP

growth method : vFG

SIZE : 2~ 4 INCH

Thickness : 350-650um

application : III-V direct bandgap semiconductor material

surface : ssp/dsp

package : single wafer box

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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +

growth (modified VFG method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed.

The dopant (Fe, S, Sn or Zn)is added to the crucible along with the polycrystal. High pressure is applied inside the chamber to prevent decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity and low dislocation density inP single crystal.

The VFG technique improves upon the LEC method thanks to a thermal baffle technology in connection with a numerical

modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule.

Applications:
IIt has the advantages of high electronic limit drift speed, good radiation resistance and good heat conduction. Suitable for manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.

Features:
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing

Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate

size (mm) Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized
ra Surface roughness(Ra):<=5A
polish single or doubles side polished
package 100 grade cleaning plastic bag in 1000 cleaning room

Thick 650um 4 Inch Single Crystal InP Semiconductor SubstrateThick 650um 4 Inch Single Crystal InP Semiconductor Substrate

---FAQ –

Q: Are you trading company or manufacturer ?

A: zmkj is a trading company but have a sapphire manufacturer
as a supplier of semiconductor materials wafers for a wide span of applications.

Q: How long is your delivery time?

A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not

in stock,it is according to quantity.

Q: Do you provide samples ? is it free or extra ?

A: Yes, we could offer the sample for free charge but do not pay the cost of freight.

Q: What is your terms of payment ?

A: Payment<=1000USD, 100% in advance. Payment>=1000USD,
50% T/T in advance ,balance before shippment.
If you have another question, pls feel free to contact us as below:


Product Tags:

InP Semiconductor Substrate

      

Single Crystal Semiconductor Substrate

      

650um InP wafers

      
China Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate wholesale

Thick 650um 4 Inch Single Crystal InP Semiconductor Substrate Images

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